“ENHANCING THE PERFORMANCE OF SPINTRONIC DEVICES AT ATOMIC SCALE USING He+ ION IRRADIATION”
Thursday, March 27 at Noon
MALA 7200
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Abstract
We have developed a unique manufacturing process based on He+ ion irradiation to tailor the structural properties of ultra-thin magnetic materials at atomic level and enhance their performance. The utilization of light ions provides the precise control of inter-atomic displacements through low energy transfer. The key feature of the technology is the post-growth control at the atomic scale of structural properties and the related magnetic properties. When realized through a mask this technology enables lateral modulation of magnetic properties without any physical etching.
In this talk, I will demonstrate that He+ ion irradiation can be used to enhance the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy for application to MRAM, magnetic sensors and neuromorphic computing.
Biography
Dr. Dafiné Ravelosona conducts research in experimental condensed matter physics. He has more than 25 years of experience in the understanding of domain wall dynamics and spin transport in magnetic films and devices with perpendicular anisotropy as well as in the engineering of magnetic materials using light ion irradiation. His record includes over 190 papers and 5 patents. He is the founder of 2 start-up companies, including Spin-Ion Technologies in 2017, a company that is developing a manufacturing process based on ion beam treatment to enhance the performance of spintronic technologies. His company has raised over €5 million in funding, he was awarded about 10 innovation prizes, and was elected APS industrial fellow in 2024.
Ravelosona received his PhD from the University of Paris VII in 1995. From 2004 to 2005, he was an invited scientist at the Research Center of Hitachi Global Storage Technology in Silicon Valley where his work is referenced as the first demonstration of switching perpendicular nanomagnets with a polarized current.