“Ferroelectric Nitride Semiconductors: From Materials to Devices”
Wednesday, April 16 at 2:00pm
MALA 5050
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Abstract
The incorporation of group IIIB elements such as scandium (Sc) can transform conventional III-nitride semiconductors to be ferroelectric. This new class of ferroelectric nitride semiconductors can be seamlessly integrated with the well-established III-nitride and Si electronics with promising applications in high power, high frequency, high temperature electronics, as well as memory, logic, and MEMs devices. Moreover, ferroelectric ScAlN exhibits significantly enhanced piezoelectric and nonlinear optical response compared to AlN, which makes it attractive for high frequency resonators and filters and nonlinear optical processes. In this talk, I will present recent advances of ferroelectric III-nitride semiconductors, including epitaxial growth, the underlying physics of their unusual structural, optical, electrical, and ferroelectric properties, as well as their emerging device applications.
Biography
Zetian Mi, PhD, is a professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of semiconductor nanotechnology, optoelectronics, and photonics. He is a recipient of the Optica’s Nick Holonyak, Jr. Award (2025), the ISCS Quantum Devices Award (2024), the Science and Engineering Award from W. M. Keck Foundation (2020), the IEEE Photonics Society Distinguished Lecturer Award (2021), the IEEE Nanotechnology Council Distinguished Lecturer Award (2020), and the David E. Liddle Research Excellence Award (2021), the Rexford E. Hall Innovation Excellence Award (2024), and the Wise-Najafi Prize for Engineering Excellence in the Miniature World (2025) from the University of Michigan. He is a fellow of IEEE, APS, Optica, and SPIE. He is a co-founder of NS Nanotech Inc. and NX Fuels Inc.